排序方式: 共有52条查询结果,搜索用时 31 毫秒
11.
太阳过渡区是太阳色球层顶到日冕底部的大气薄层。厚度仅几百千米,但其间太阳等离子体参数变化剧烈。过渡区的辐射多为光学薄的远紫外、极紫外发射谱线和背景连续谱线。由于地球大气的吸收,过渡区紫外光谱需通过天基观测才能实现。近几十年来,星载仪器的成功发射为太阳过渡区的研究打开了新纪元。工作回顾了太阳过渡区紫外光谱的观测历史和各类星载仪器,特别介绍了近十几年几种重要的光谱仪器。详细阐述了过渡区紫外光谱的发生率、电子密度和电子温度的诊断原理。讨论了过渡区紫外谱线的形状,并以SOHO/SUMER光谱仪为例介绍了表征谱线的几种重要参量及其物理意义。 相似文献
12.
镨叶绿素a分子结构的确定 总被引:7,自引:0,他引:7
通过合成镨叶绿素a(Pr-Chla)研究了稀土在叶绿素中的结合方式.Pr-Chla的紫外可见光谱(UV-Vis)、红外光谱(FTIR)证实镨离子已配位到叶绿素a的卟啉环上.其磁圆二色谱(MCD)在Soret带具有双层夹心卟啉的特征结构;通过扩展X射线吸收精细结构谱(EXAFS),采用双层夹心结构模型拟合,确定了Pr周围的近邻结构.表明合成镨叶绿素a具有双层夹心结构.Pr(Ⅲ)夹于两个卟啉环之间,与上下卟啉环上共8个N原子配位,Pr-N键平均键长0.242nm. 相似文献
13.
14.
We analyze decoherence properties of entangled coherent states due to channel losses. Employing the concept of “entanglement of formation”, degradation of fidelity and degree of entanglement are calculated. We have obtained an explicit expression of concurrence concerning the symmetric noise channel and found our result is just incompatible with that of [K. Park, H. Jeong, Phys. Rev. A 82 (2010) 062325] measured by negativity in the limit of α→0. We demonstrate that entangled coherent states with sufficient small amplitudes are more robust against channel decoherence than Bell states. 相似文献
15.
环向场(Toroidal Field, TF) 线圈是聚变堆主机关键系统综合研究设施(CRAFT) 的重要组成部分, 由CICC(Cable in Conduit Conductor) 导体完成线圈绕制, 通过真空压力浸渍(Vacuum Pressure Impregnation, VPI)完成线圈绝缘处理. 在树脂浸渍线圈绝缘层, 随后进行较长时间的高温固化, 以完全固化整个绝缘层的树脂. 在浸渍和固化过程中,VPI 模具不仅承受线圈本身的载荷, 还要承受大气压力、 内部打压、 热变形等. 为了保证线圈绝缘质量, 采用 CATIA 软件对 VPI 模具进行3D 建模, 并对 VPI 模具进行了 Ansys Workbench 有限元软件分析与校核. 分析表明,VPI 模具的设计合理, 为工程设计提供了理论和实践依据. 相似文献
16.
17.
18.
用提拉法生长了(1.5 at.%)Nd~(3+):Y_3Sc_2Al_3O_(12)(YSAG)激光晶体,摇摆曲线表明晶体结晶质量优良.测量了该晶体的吸收和发光光谱,表明其适合成熟的808 nm激光二极管(LD)抽运,其~4F_(3/2)→~4I_(11/2)跃迁最强发射波长为1059 nm,发射截面为1.03×10~(-19)cm~2,同时其激光上能级寿命为253μs,表明Nd:YSAG具有和Nd:YAG相近的效率,但其激光上能级寿命比Nd:YAG长约20μs.以LD抽运2 mm×2 mm×6 mm Nd:YSAG激光棒,激光阈值为0.85 W,最高输出功率为1.1 W,激光斜效率为21.1%,光-光转化效率为18.3%.综合表明Nd:YSAG单晶作为激光性能优良的全固态激光材料,更适合全固态调Q激光输出. 相似文献
19.
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3+ and Pr^3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3+ ions occupied Bi^3+ sites, and there could be an energy transfer from Bi^3+ ions to RE^3+ ions. 相似文献
20.